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  • 标题:Spin injection and magnetoresistance in MoS2-based tunnel junctions using Fe3Si Heusler alloy electrodes
  • 本地全文:下载
  • 作者:Worasak Rotjanapittayakul ; Wanchai Pijitrojana ; Thomas Archer
  • 期刊名称:Scientific Reports
  • 电子版ISSN:2045-2322
  • 出版年度:2018
  • 卷号:8
  • 期号:1
  • 页码:4779
  • DOI:10.1038/s41598-018-22910-9
  • 语种:English
  • 出版社:Springer Nature
  • 摘要:monolayers. Most importantly, both the SIE and the MR remain robust at finite bias, namely MR > 100% and SIE > 50% at 0.7 V. Our proposed materials stack thus demonstrates the possibility of developing a new generation of performing magnetic tunnel junctions with layered two-dimensional compounds as spacers.
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