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  • 标题:Induced nano-scale self-formed metal-oxide interlayer in amorphous silicon tin oxide thin film transistors
  • 本地全文:下载
  • 作者:Xianzhe Liu ; Hua Xu ; Honglong Ning
  • 期刊名称:Scientific Reports
  • 电子版ISSN:2045-2322
  • 出版年度:2018
  • 卷号:8
  • 期号:1
  • 页码:4160
  • DOI:10.1038/s41598-018-22602-4
  • 语种:English
  • 出版社:Springer Nature
  • 摘要:interlayer acting as an efficient interface modification layer could conduce to the stepwise internal transport barrier formation while blocking Mo atoms diffuse into a-STO layer, which would contribute to the formation of ohmic contact between Mo and a-STO film. It can effectively improve device performance, reduce cost and save energy for the realization of large-area display with high resolution in future.
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