摘要：We report on the magnetic field control of a bipolar resistive switching in Ag/TiO2/FTO based resistive random access memory device through I-V characteristics. Essentially, in the presence of magnetic field and in the low resistance state, an abrupt change in the resistance of the device demands higher voltage, hinting that residual Lorentz force plays a significant role in controlling the resistance state. Endurance characteristics of the device infer that there is no degradation of the device even after repeated cycling, which ensures that the switching of resistance between 'off' and 'on' states is reproducible, reversible and controllable. Magnetic field control of 'on' and 'off' states in endurance characteristics suggest that this device can be controlled in a remote way for multi-bit data storage.
