摘要：Laser damage of zigzag slab lasers occurs at interface between laser crystal and SiO2 film. Although an additional HfO2 layer could be used to manipulate electric-field on the crystal-film interface, their high absorption and polycrystalline structure were unacceptable. SiO2 was then doped in HfO2 to suppress its crystallization and to achieve low absorption by annealing. HfxSi1-xO2 nanocomposite layers were then inserted between laser crystal and SiO2 film to minimize electric-field at crystal-film interface. Laser damage resistance of this new architecture is two times higher than that of traditional zigzag slab lasers.
