摘要：Silver nanowires (AgNWs) are a promising candidate to replace indium tin oxide (ITO) as transparent electrode material. However, the loose contact at the junction of the AgNWs and residual surfactant polyvinylpyrrolidone (PVP) increase the sheet resistance of the AgNWs. In this paper, an argon (Ar) plasma treatment method is applied to pristine AgNWs to remove the PVP layer and enhance the contact between AgNWs. By adjusting the processing time, we obtained AgNWs with a sheet resistance of 7.2Ω/□ and a transmittance of 78% at 550 nm. To reduce the surface roughness of the AgNWs, a peel-off process was used to transfer the AgNWs to a flexible NOA63 substrate. Then, an OLED was fabricated with the plasma-treated AgNWs electrode as anode. The highest brightness (27000 cd/m2) and current efficiency (11.8 cd/A) was achieved with a 30 nm thick light emitting layer of tris-(8-hydroxyquinoline) aluminum doped with 1% 10-(2-benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H,5 H,11H-(1)-benzopyropyrano(6,7-8-I,j)quinolizin-11-one. Compared to thermal annealing, the plasma-treated AgNW film has a lower sheet resistance, a shorter processing time, and a better hole-injection. Our results indicate that plasma treatment is an effective and efficient method to enhance the conductivity of AgNW films, and the plasma-treated AgNW electrode is suitable to manufacture flexible organic optoelectronic devices.
