出版社：Faculty of Humanities, Kaunas University of Technology
其他摘要：The new equations of minority carrier hole and electron injection levels k p and k n valid at high-level injection have been derived. They relate the k p and k n and the voltage drop across the p-n junction depletion region U d . At low U d , i.e. at low-level injection the obtained equations coincide with well known exponential equations of injection level. However, at high-level injection when U d becomes high and is close to the potential barrier of junction, the derived equations give increased steepness of k p and k n dependence on U d as compared with the exponential law. The dependences of k p and k n of concrete silicon p-n junctions with different impurity concentrations have been analyzed using derived equations of injection level. DOI: http://dx.doi.org/10.5755/j01.eee.19.2.3467
