出版社：Faculty of Humanities, Kaunas University of Technology
其他摘要：Problems of thermal oxidation process influence, related with MOS transistors separation was researched. Mechanical models are used to describe stress analysis coupled with oxidation processes: elastic, viscous, visco-elastic mechanical models. Three-dimensional integrated structures are formed using the finite element method for local thermal oxidation process simulation. Determinated, that parameters of three-dimensional integrated element and three-dimensional integrated structure change due to the thermal technology, which are difficult to identify and evaluate during the production. Redistribution of impurities in the thermal process is very important for the production of three dimensional integrated structures of increasingly higher integration degree, impurities move to other areas or redistribute because of the thermal process, error occurs in the formed areas. Ill. 5, bibl. 9 (in English; summaries in English, Russian and Lithuanian).
