期刊名称：Proceedings of the National Academy of Sciences
印刷版ISSN：0027-8424
电子版ISSN：1091-6490
出版年度：2019
卷号：116
期号：18
页码：8798-8802
DOI：10.1073/pnas.1822138116
出版社：The National Academy of Sciences of the United States of America
摘要：Controlling the electronic properties of oxides that feature a metal–insulator transition (MIT) is a key requirement for developing a new class of electronics often referred to as “Mottronics.” A simple, controllable method to switch the MIT properties in real time is needed for practical applications. Here we report a giant, nonvolatile resistive switching (ΔR/R > 1,000%) and strong modulation of the MIT temperature (ΔTc > 30 K) in a voltage-actuated V2O3/PMN-PT [Pb(Mg,Nb)O3-PbTiO3] heterostructure. This resistive switching is an order of magnitude larger than ever encountered in any other similar systems. The control of the V2O3 electronic properties is achieved using the transfer of switchable ferroelastic strain from the PMN-PT substrate into the epitaxially grown V2O3 film. Strain can reversibly promote/hinder the structural phase transition in the V2O3, thus advancing/suppressing the associated MIT. The giant resistive switching and strong Tc modulation could enable practical implementations of voltage-controlled Mott devices and provide a platform for exploring fundamental electronic properties of V2O3.
