摘要：A perfect ohmic contact is formed at the interface of indium tin oxide (ITO) and N , N ′-di(naphthalene-1-yl)- N , N ′-diphenyl-benzidine (NPB) using ReO3 as the interfacial layer. The hole injection efficiency is close to 100% at the interface, which is much higher than those for interfacial layers of 1,4,5,8,9,11-hexaazatripheylene hexacarbonitrile (HAT-CN) and MoO3. Interestingly, the ReO3 and MoO3 interfacial layers result in the same hole injection barrier, ≈0.4 eV, to NPB, indicating that the Fermi level is pinned to the NPB polaron energy level. However, a significant difference is observed in the generated charge density in the NPB layer near the interfacial layer/NPB interface, indicating that charge generation at the interface plays an important role in forming the ohmic contact.
