摘要：Ultra-short pulses in blue region generated from compact and low-cost semiconductor lasers have attracted much attention for a wide variety of applications. Nitride-based vertical-cavity surface-emitting lasers (VCSELs), having intrinsic high material gain and short cavities, favor the generation of ultra-short blue pulses via a simple gain-switching technique. In this study, we fabricated a single-mode InGaN VCSEL consisting of 10-period InGaN/GaN quantum wells (QWs). The output pulses were evaluated accurately with an up-conversion measurement system having time resolution of 0.12 ps. We demonstrated that ultra-short blue pulses, as short as 2.2 ps at 3.4 K and 4.0 ps at room temperature, were generated from the gain-switched InGaN VCSEL via impulsive optical pumping, without any post-processing. The gain-switched pulses we obtained should greatly promote the development of ultra-short blue pulse generation. In addition, this successful assessment demonstrates the up-conversion technique's usefulness for characterizing ultra-short blue pulses from semiconductor lasers.
