摘要：We investigate the growth of Cu films on two different Cu seed layers: one with regular -oriented grains and the other with very strong -preferred orientation. It is found that densely-packed nanotwinned Cu (nt-Cu) can be grown by pulsed electroplating on the strong -oriented Cu seed layer without a randomly-oriented transition layer between the nt-Cu and the Cu seed layer. The electroplated nt-Cu grow almost epitaxially on the seed layer and formed -oriented columnar structures. However, with the regular -oriented Cu seed, there is a randomly-oriented transition layer between the nt-Cu and the regular -oriented Cu seed. The results indicate that the seed layer plays a crucial role on the regularity of -oriented nanotwinned Cu.
