摘要：Graphene exhibits unique electronic properties, and its low dimensionality, structural robustness, and high work-function make it very promising as the charge storage media for memory applications. Along with the development of miniaturized and scaled up devices, nanostructured graphene emerges as an ideal material candidate. Here we proposed a novel non-volatile charge trapping memory utilizing isolate and uniformly distributed nanographene crystals as nano-floating gate with controllable capacity and excellent uniformity. Nanographene charge trapping memory shows large memory window (4.5 V) at low operation voltage (±8 V), good retention (>10 years), chemical and thermal stability (1000°C), as well as tunable memory performance employing with different tunneling layers. The fabrication of such memory structure is compatible with existing semiconductor processing thus has promise on low-cost integrated nanoscale memory applications.
