文章基本信息
- 标题：Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells
- 本地全文：下载
- 作者：Na Gao ; Kai Huang ; Jinchai Li 等
- 期刊名称：Scientific Reports
- 电子版ISSN：2045-2322
- 出版年度：2012
- 卷号：2
- 期号：1
- DOI：10.1038/srep00816
- 语种：English
- 出版社：Springer Nature
- 摘要：
We report the development of complete structural AlGaN-based deep-ultraviolet light-emitting diodes with an aluminum thin layer for increasing light extraction efficiency. A 217% enhancement in peak photoluminescence intensity at 294 nm is observed. Cathodoluminescence measurement demonstrates that the internal quantum efficiency of the deep-UV LEDs coated with Al layer is not enhanced. The emission enhancement of deep-UV LEDs is attributed to the higher LEE by the surface plasmon-transverse magnetic wave coupling. When the proportion of the TM wave to the Al layer increases with the Al content in the AlxGa1-xN multiple quantum wells, i.e., the band edge emission energy, the enhancement ratio of the Al-coated deep-UV LEDs increases.
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