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  • 标题:Biaxial Compressive Strain Engineering in Graphene/Boron Nitride Heterostructures
  • 本地全文:下载
  • 作者:Wei Pan ; Jianliang Xiao ; Junwei Zhu
  • 期刊名称:Scientific Reports
  • 电子版ISSN:2045-2322
  • 出版年度:2012
  • 卷号:2
  • 期号:1
  • DOI:10.1038/srep00893
  • 语种:English
  • 出版社:Springer Nature
  • 摘要:

    Strain engineered graphene has been predicted to show many interesting physics and device applications. Here we study biaxial compressive strain in graphene/hexagonal boron nitride heterostructures after thermal cycling to high temperatures likely due to their thermal expansion coefficient mismatch. The appearance of sub-micron self-supporting bubbles indicates that the strain is spatially inhomogeneous. Finite element modeling suggests that the strain is concentrated on the edges with regular nano-scale wrinkles, which could be a playground for strain engineering in graphene. Raman spectroscopy and mapping is employed to quantitatively probe the magnitude and distribution of strain. From the temperature-dependent shifts of Raman G and 2D peaks, we estimate the TEC of graphene from room temperature to above 1000K for the first time.

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    © 2012 Macmillan Publishers Limited. All rights reserved

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