摘要：The state-of-art Si Matel-Oxide-Semiconductor Field-Effect-Transistor (MOS-FET) meets the problem of the Power Consumption (P C ) can not be effecively deceased guided by the Moore's Law as before. The GFET has the problem of the device can not be effectively turned off, since the band-gap of the graphene is zero. To solve these problems, noticing the amount of the carriers in the 2 dementional semiconductor material is limited, we propose a Matel-Semi-Insulator-Semiconductor Field-Effect-Transistor (MSIS-FET) to replace the traditional MOS-FET. We verify our idea by fabricating the graphene MSIS-FETs using the natural Aluminium-oxide (Al-oxide) as the semi-insulator gate dielectric. From MSIS-FETs fabricated, we obtain following experimental results. The graphene MSIS-FET is turned off very well, a recorded high Ids on/off ratio of 5 × 10 7 is achieved. A saddle and close-loop shape transfer feature of Ids-Vgs is obtained first time for transistors. A non-volatile memory characteristics is observed. A carrier re-injection principle and a super-Low P C mechanism for semiconductor devices and integrated circuits (ICs) are found from the transfer feature of the graphene MSIS-FET. It is shown that the P C of the semiconductor devices and (ICs) can be reduced by over three orders of magnitude by using this new mechanism.
