摘要：We report on memsensors, a class of two terminal devices that combines features of memristive and sensor devices. Apart from a pinched hysteresis (memristive property) and stimulus dependent electrical resistance (sensing property) further properties like dynamic adaptation to an external stimulus emerge. We propose a three component equivalent circuit to model the memsensor electrical behaviour. In this model we find stimulus dependent hysteresis, a delayed response to the sensory signal and adaptation. Stimulus dependent IV hysteresis as a fingerprint of a memsensor device is experimentally shown for memristive ZnO microrods. Adaptation in memsensor devices as found in our simulations resembles striking similarities to the biology. Especially the stimulus dependency of the IV hysteresis and the adaptation to external stimuli are superior features for application of memsensors in neuromorphic engineering. Based on the simulations and experimental findings we propose design rules for memsensors that will facilitate further research on memsensitive systems.
