摘要：We report the observation of ferromagnetic (FM) and antiferromagnetic (AFM) interlayer exchange coupling (IEC) in GaMnAsP-based trilayer structures with out-of-plane magnetic anisotropy. Magnetization and anomalous Hall effect (AHE) measurements show well-resolved magnetization transitions corresponding to the two GaMnAsP layers. Minor loop measurements reveal a characteristic shift caused by IEC in all trilayer samples investigated. Interestingly, the FM IEC changes to AFM IEC for a trilayer with the thinnest (7 nm) top GaMnAsP layer as the temperature increases. The observation of temperature-induced transition of FM and AFM IEC in the same sample suggests the possibility of device applications by controlling the type of IEC in such GaMnAsP-based multilayers.
