摘要：In this study, InAlN was grown on glass substrates using pulsed sputtering deposition (PSD) at room temperature (RT) and was applied to thin-film transistors (TFTs). The surface flatness of the InAIN films was improved by reducing the growth temperature from 350 °C to RT. Further, the electron mobility and concentration of the InAlN film that was grown at RT were observed to be strongly dependent on the In composition. It was also observed that the electron concentration could be reduced during the introduction of Al atoms into InN, which could most likely be attributed to the reduction in the position of the Fermi level stabilization energy with respect to the conduction band edge. Further, InAlN-TFT was fabricated, and successful operation with a field-effect mobility of 8 cm 2 V -1 s -1 was confirmed. This was the first demonstration of the operation of TFTs based on the growth of InAlN on an amorphous substrate at RT.
