摘要：Quantum-dot (QD) light-emitting devices (QLEDs) have been attracting considerable attention owing to the unique properties of process, which can control the emission wavelength by controlling the particle size, narrow emission bandwidth, and high brightness. Although there have been rapid advances in terms of luminance and efficiency improvements, the long-term device stability is limited by the low chemical stability and photostability of the QDs against moisture and air. In this study, we report a simple method, which can for enhance the long-term stability of QLEDs against oxidation by inserting Al into the shells of CdSe/ZnS QDs. The Al coated on the ZnS shell of QDs act as a protective layer with Al 2 O 3 owing to photo-oxidation, which can prevents the photodegradation of QD with prolonged irradiation and stabilize the device during a long-term operation. The QLEDs fabricated using CdSe/ZnS/Al QDs exhibited a maximum luminance of 57,580 cd/m 2 and current efficiency of 5.8 cd/A, which are significantly more than 1.6 times greater than that of CdSe/ZnS QDs. Moreover, the lifetimes of the CdSe/ZnS/Al-QD-based QLEDs were significantly improved owing to the self-passivation at the QD surfaces.
