摘要：In this work, we have successfully demonstrated the junctionless (JL) transistors with two-dimensional-like (2D-like) nano-sheet (NS) material, amorphous indium tungsten oxide (a-IWO), as an active channel layer. The influences of the different gate insulator (GI) materials and the scalings of GI thickness, a-IWO channel thickness, and channel lengths on the a-IWO NS JL transistors (a-IWO NS-JLTs) have been studied for the purposes of low operation voltage (gate voltage ≤2V) and high performance. The 2D-like a-IWO NS-JLTs exhibit low operation voltage, low source/drain (S/D) contact resistance (R C ) and other key electrical characteristics, such as high field-effect mobility (μ FE ), near ideal subthreshold swing (S.S.), and large ON/OFF currents ratio (I ON /I OFF ). The remarkable device characteristics also make the proposed 2D-like a-IWO NS-JLTs promising for system-on-panel (SoP) and vertically stacked (VS) hybrid CMOS applications.
