摘要：Two AlGaN samples with different strain were designed to investigate mechanism of stress-driven composition evolution. It is discovered that AlGaN grown on AlN or (AlN/GaN superlattices (SLs))/GaN both consist of two distinct regions with different compositions: transition region and uniform region, which is attributed to the compositional pulling effect. The formation of the transition region is due to the partial stress release caused by the generation of misfit dislocations near the hetero-interface. And the Al composition in the uniform region depends on the magnitude of residual strain. The difference in relaxation degree is 80.5% for the AlGaN epilayers grown on different underlayers, leading to a large Al composition difference of 22%. The evolutionary process of Al composition along [0001] direction was investigated in detail.
