摘要：Could 'defect-considered' void formation in metal-oxide be actively used? Is it possible to realize stable void formation in a metal-oxide layer, beyond unexpected observations, for functional utilization? Herein we demonstrate the effective tailoring of void formation of NiO for ultra-sensitive UV photodetection. NiO was formed onto pre-sputtered ZnO for a large size and spontaneously formed abrupt p-NiO/n-ZnO heterojunction device. To form voids at an interface, rapid thermal process was performed, resulting in highly visible light transparency (85-95%). This heterojunction provides extremely low saturation current (<0.1 nA) with an extraordinary rectifying ratio value of over 3000 and works well without any additional metal electrodes. Under UV illumination, we can observe the fast photoresponse time (10 ms) along with the highest possible responsivity (1.8 A W(-1)) and excellent detectivity (2 × 10(13) Jones) due to the existence of an intrinsic-void layer at the interface. We consider this as the first report on metal-oxide-based void formation (Kirkendall effect) for effective photoelectric device applications. We propose that the active adoption of 'defect-considered' Kirkendall-voids will open up a new era for metal-oxide based photoelectric devices.
