摘要：The bottom-up approach using self-assembled materials/processes is thought to be a promising solution for next-generation device fabrication, but it is often found to be not feasible for use in real device fabrication. Here, we report a feasible and versatile way to fabricate high-density, nanoscale memory devices by direct bottom-up filling of memory elements. An ordered array of metal/oxide/metal (copper/copper oxide/copper) nanodots was synthesized with a uniform size and thickness defined by self-organized nanotemplate mask by sequential electrochemical deposition (ECD) of each layer. The fabricated memory devices showed bipolar resistive switching behaviors confirmed by conductive atomic force microscopy. This study demonstrates that ECD with bottom-up growth has great potential to fabricate high-density nanoelectronic devices beyond the scaling limit of top-down device fabrication processes.
