摘要：This article proposes a disruptive device concept which meets both low power and high performance criterion for post-CMOS computing and at the same time enables aggressive channel length scaling. This device, hereafter refer to as two-dimensional electrostrictive field effect transistor or 2D-EFET, allows sub-60 mV/decade subthreshold swing and considerably higher ON current compared to any state of the art FETs. Additionally, by the virtue of its ultra-thin body nature and electrostatic integrity, the 2D-EFET enjoys scaling beyond 10 nm technology node. The 2D-EFET works on the principle of voltage induced strain transduction. It uses an electrostrictive material as gate oxide which expands in response to an applied gate bias and thereby transduces an out-of-plane stress on the 2D channel material. This stress reduces the inter-layer distance between the consecutive layers of the semiconducting 2D material and dynamically reduces its bandgap to zero i.e. converts it into a semi-metal. Thus the device operates with a large bandgap in the OFF state and a small or zero bandgap in the ON state. As a consequence of this transduction mechanism, internal voltage amplification takes place which results in sub-60 mV/decade subthreshold swing (SS).
