摘要：Metal induced nucleation is adopted to achieve the growth of transition metal dichalcogenides at controlled locations. Ordered arrays of MoS2 and WS2 have successfully been fabricated on SiO2 substrates by using the patterned Pt/Ti dots as the nucleation sites. Uniform MoS2 monolayers with the adjustable size up to 50 μm are grown surrounding these metal patterns and the mobility of such layer is about 0.86 cm(2)/V·s. The crystalline flakes of WS2 are also fabricated extending from the metal patterns and the electron mobility of these flakes is up to 11.36 cm(2)/V·s.
