摘要：The search for quantum spin Hall (QSH) insulators with high stability, large and tunable gap and topological robustness, is critical for their realistic application at high temperature. Using first-principle calculations, we predict the cyanogen saturated stanene SnCN as novel topological insulators material, with a bulk gap as large as 203 meV, which can be engineered by applying biaxial strain and electric field. The band topology is identified by Z2 topological invariant together with helical edge states, and the mechanism is s-p xy band inversion at G point induced by spin-orbit coupling (SOC). Remarkably, these systems have robust topology against chemical impurities, based on the calculations on halogen and cyano group co-decorated stanene SnX x X′1 −x (X,X′ = F, Cl, Br, I and CN), which makes it an appropriate and flexible candidate material for spintronic devices.
