摘要：Graphene is one of the ideal nanomaterials to be paired with silicon, and their complementary properties can be exploited in field emission (FE) devices. We reported an efficient way to produce and adjust the dimension of uniform protrusions within graphene. First, a multistep template replication process was utilized to fabricate highly periodic and well-aligned silicon nanowires (SiNWs) of different diameters (400, 500 and 600 nm). Then, large-scale and uniform graphene, fabricated by chemical vapor deposition (CVD), was transferred onto these size-controlled SiNWs to obtain the nanoscale and uniform undulations. As compared to the nanowires alone, the hybrid structures lead to higher FE performance due to electron conductivity enhancement, high-density emmison protrusions and band bending. These hybrid SiNWs/graphene structures could provide a promising class of field emission cathodes.
