摘要：Organic-inorganic perovskite materials have attracted extensive attention for wide range of applications such as solar cells, photo detectors, and memory devices. However, the lack of stability in ambient condition prevented the perovskite materials from applying to practical applications. Here, we demonstrate resistive switching memory devices based on organic-inorganic perovskite (CH3NH3PbI3) that have been passivated using thin metal-oxide-layers. CH3NH3PbI3-based memory devices with a solution-processed ZnO passivation layer retain low-voltage operation and, on/off current ratio for more than 30 days in air. Passivation with atomic-layer-deposited (ALD) AlOx is also demonstrated. The resistive switching memory devices with an ALD AlOx passivation layer maintained reliable resistive switching for 30 d in ambient condition, but devices without the passivation layer degraded rapidly and did not show memory properties after 3 d. These results suggest that encapsulation with thin metal-oxide layers is easy and commercially-viable methods to fabricate practical memory devices, and has potential to realize memory devices with long-term stability and reliable, reproducible programmable memory characteristics.
