摘要：In this work we analyze GISAXS measurements of the structure factor of Si surfaces evolving during 1 keV Ar+ ion bombardment. Using newly-developed methods sensitive to the full range of experimentally-available wavenumbers q, we extract the linear amplification rate R(q) governing surface stability over a range of wavenumbers 4-5 times larger than has previously been obtained. Comparing with theoretical models also retaining full wavenumber-dependence, we find an excellent fit of the experimental data over the full range of irradiation angles and wavenumbers. Moreover, the fitted parameter values represent experimental evaluation of the magnitudes of most physical mechanisms currently believed to be important to the pattern-formation process. In all cases, the extracted values agree well with direct observations or atomistic simulations of the same quantities, suggesting that GISAXS analysis may allow more powerful comparison between experiment and theory than had previously been thought.
