摘要：Most theoretical studies of tunneling in Dirac and the closely related Weyl semimetals have modeled these materials as single Weyl nodes described by the three-dimensional Dirac equation [Formula: see text]. The influence of scattering between the different valleys centered around different Weyl nodes, and the Fermi arc states which connect these nodes are hence not evident from these studies. In this work we study the tunneling in a thin film system of the Dirac semimetal Na3Bi consisting of a central segment with a gate potential, sandwiched between identical semi-infinite source and drain segments. The model Hamiltonian we use for Na3Bi gives, for each spin, two Weyl nodes separated in k-space symmetrically about k z = 0. The presence of a top and bottom surface in the thin film geometry results in the appearance of Fermi arc states and energy subbands. We show that (for each spin) the presence of two Weyl nodes and the Fermi arc states results in enhanced transmission oscillations, and finite transmission even when the energy falls within the bulk band gap in the central segment respectively. These features are not captured in single Weyl node models.
