摘要：Based on first-principles calculations including spin-orbit coupling, we investigated the stability and electronic structure of unexplored double-side decorated arsenenes. It has been found that these new double-side decorated arsenenes, which we call "hydrogen-arsenene-halogen (H-As-X, X is halogen)", are dynamically stable via the phonon dispersion calculations except H-As-F sheets. In particular, all of H-As-X nanosheets are direct band gap semiconductors with a strong dispersion near the Fermi level, which is substantially different from the previous works of double-side decorated arsenenes with zero band gaps. Our results reveal a new route to change the band gap of arsenene from indirect to direct. Furthermore, we also studied bilayer, trilayer, and multilayer H-As-Cl sheets to explore the effects of the layer number. The results indicate that bilayer, trilayer, and multilayer H-As-Cl sheets display novel electronic structure, namely multi-Dirac cones character, and the Dirac character depends sensitively on the layer number. It is noted that the frontier states near the Fermi level are dominantly controlled by the top and bottom layers in trilayer and multilayer H-As-Cl sheets. Our findings may provide the valuable information about the new double-side decorated arsenene sheets in various practical applications in the future.
