摘要：In this study, we propose a self-activated radical doping (SRD) method on the catalyzed surface of amorphous oxide film that can improve both the electrical characteristics and the stability of amorphous oxide films through oxidizing oxygen vacancy using hydroxyl radical which is a strong oxidizer. This SRD method, which uses UV irradiation and thermal hydrogen peroxide solution treatment, effectively decreased the amount of oxygen vacancies and facilitated self-passivation and doping effect by radical reaction with photo-activated oxygen defects. As a result, the SRD-treated amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) showed superior electrical performances compared with non-treated a-IGZO TFTs. The mobility increased from 9.1 to 17.5 cm(2)/Vs, on-off ratio increased from 8.9 × 10(7) to 7.96 × 10(9), and the threshold voltage shift of negative bias-illumination stress for 3600 secs under 5700 lux of white LED and negative bias-temperature stress at 50 °C decreased from 9.6 V to 4.6 V and from 2.4 V to 0.4 V, respectively.
