摘要：We experimentally demonstrate surface plasmon resonance (SPR) in the terahertz range in InSb and InAs. The surface plasmon is excited on the interface between a thin polymer film and the semiconductor using a silicon prism in Otto configuration. The low effective mass of InSb and InAs permits tuning of the SPR by an external magnetic field in the transversal configuration. The data show a good agreement with a model. Strong excitation of the surface plasmon is present in both materials, with a shifting of resonance position by more than 100 GHz for the field of 0.25 T, to both higher and lower energies with opposite orientation of the magnetic field. Applicability of the terahertz SPR sensor is discussed, along with modeled design for the Kretschmann configuration.
