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  • 标题:Origin of asymmetric broadening of Raman peak profiles in Si nanocrystals
  • 本地全文:下载
  • 作者:Yukun Gao ; Penggang Yin
  • 期刊名称:Scientific Reports
  • 电子版ISSN:2045-2322
  • 出版年度:2017
  • 卷号:7
  • 期号:1
  • DOI:10.1038/srep43602
  • 语种:English
  • 出版社:Springer Nature
  • 摘要:The asymmetric peak broadening towards the low-frequency side of the Raman-active mode of Si nanocrystals with the decreasing size has been extensively reported in the literatures. In this study, an atomic coordination model is developed to study the origin of the ubiquitous asymmetric peak on the optical phonon fundamental in the Raman spectra of Si nanocrystals. Our calculation results accurately replicate the line shape of the experimentally measured optical Raman curves. More importantly, it is revealed that the observed asymmetric broadening is mainly caused by the surface bond contraction and the quantum confinement.
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