期刊名称：IOP Conference Series: Earth and Environmental Science
印刷版ISSN：1755-1307
电子版ISSN：1755-1315
出版年度：2019
卷号：252
期号：3
页码：1-11
DOI：10.1088/1755-1315/252/3/032069
出版社：IOP Publishing
摘要：Thyristor will damage because of local overheating under narrow pulse width and large inrush current, if the selection is unreasonable. In this paper, the thermal field model of thyristor opening process is established and the transient temperature field distribution of thyristor is obtained by simulation. Simulation results show that under the narrow pulse width and large current, the temperature distribution on the silicon chip is not uniform, the temperature at the center gate is the highest, and the temperature is gradually decreased from the center point along the radius. The effect of current rise rate and chip radius on thyristor temperature distribution are simulated. Simulation results show that the higher the current rise rate, the higher the temperature of the thyristor center gate. The effect of chip radius on thyristor temperature is related to the pulse width of large inrush current. When the chip radius is smaller than the extended radius corresponding to the current pulse width, the smaller the radius, the higher the maximum temperature rise. When the radius of the chip is equal to or greater than the extended radius corresponding to the current pulse width, increasing the radius of the chip has no effect on the highest temperature rise.
