期刊名称：International Journal of Computer Science and Network Security
印刷版ISSN：1738-7906
出版年度：2019
卷号：19
期号：6
页码：85-90
出版社：International Journal of Computer Science and Network Security
摘要：Hexagonal boron nitride (h-BN) has 2-dimensional honey comb structure similar to graphene and it is a wide band-gap material. Although, h-BN sheets has been achieved on various metal substrates. Here, we demonstrate the growth of h-BN monolayer sheets on Cu foil by low pressure CVD method. Two heating zones were used to control the precursor generation and main reaction, respectively. Wafer-scale h-BN monolayer film was synthesized uniformly on Cu foil. The monolayer thickness is determined to be about 0.46 nm and the optical band-gap is ~ 6.0 eV. Extended applications of h-BN layer in conjunction with graphene could now be available for electronic devices.
关键词：Chemical Vapor Deposition method (CVD); Copper Foil; Hexagonal Boron Nitride (h-BN); Monolayer Sheets; Selected Area Electron Diffraction (SAED)
