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  • 标题:A global modeling approach of the leakage phenomena in dielectrics
  • 本地全文:下载
  • 作者:Jérémy Postel-Pellerin ; Gilles Micolau ; Philippe Chiquet
  • 期刊名称:E3S Web of Conferences
  • 印刷版ISSN:2267-1242
  • 电子版ISSN:2267-1242
  • 出版年度:2019
  • 卷号:88
  • 页码:1-8
  • DOI:10.1051/e3sconf/20198805002
  • 出版社:EDP Sciences
  • 摘要:Thanks to its low noise level, the LSBB environment provides particular environment to carry out high quality electrical characterizations. In this paper, we propose a complete modeling approach of the experimental results from our experimental microelectronic setup. The tested device is a Metal Oxide Semiconductor (MOS) floating gate capacitor which can be found in electrostatic non volatile memories such as Flash. The main idea is to characterize and model the leakage current through the tunnel oxide. We proposed, in a previous work, a model for charge loss considering a fractional Poisson process, involving only two parameters, expressed as a Mittag-Leffler (ML) function. Here, we also propose a combo of Fowler-Nordheim (FN) and Poole-Frenkel (PF) models for leakage currents, based on tunnel effect transport through the oxide. It gives the leakage current on a medium-to-long scale of time while the ML model can possibly take into account a shorter time step. The perspective is to find a relationship between these different models, used in various fields, to propose a generic model of phenomena involving leakage in complex and porous materials at different scales of time and space.
  • 其他摘要:Thanks to its low noise level, the LSBB environment provides particular environment to carry out high quality electrical characterizations. In this paper, we propose a complete modeling approach of the experimental results from our experimental microelectronic setup. The tested device is a Metal Oxide Semiconductor (MOS) floating gate capacitor which can be found in electrostatic non volatile memories such as Flash. The main idea is to characterize and model the leakage current through the tunnel oxide. We proposed, in a previous work, a model for charge loss considering a fractional Poisson process, involving only two parameters, expressed as a Mittag-Leffler (ML) function. Here, we also propose a combo of Fowler-Nordheim (FN) and Poole-Frenkel (PF) models for leakage currents, based on tunnel effect transport through the oxide. It gives the leakage current on a medium-to-long scale of time while the ML model can possibly take into account a shorter time step. The perspective is to find a relationship between these different models, used in various fields, to propose a generic model of phenomena involving leakage in complex and porous materials at different scales of time and space.
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