期刊名称：Proceedings of the National Academy of Sciences
印刷版ISSN：0027-8424
电子版ISSN：1091-6490
出版年度：2019
卷号：116
期号：26
页码：12638-12641
DOI：10.1073/pnas.1901245116
出版社：The National Academy of Sciences of the United States of America
摘要：The inverted resistance method was used in this study to extend the bulk resistivity of S m B 6 to a regime where the surface conduction overwhelms the bulk. Remarkably, regardless of the large off-stoichiometric growth conditions (inducing disorder by samarium vacancies, boron interstitials, etc.), the bulk resistivity shows an intrinsic thermally activated behavior that changes ∼7–10 orders of magnitude, suggesting that S m B 6 is an ideal insulator that is immune to disorder.
