期刊名称：Journal of Materials and Environmental Science
印刷版ISSN：2028-2508
出版年度：2018
卷号：9
期号：10
页码：2842-2848
出版社：University of Mohammed Premier Oujda
摘要：Indium selenide (InxSey) layers were grown on glass/FTO substrates usingelectrodeposition technique in a potentiostatic mode. After growth, the materials werecharacterised for their structural, optical and electrical properties. Structural studiesshow that the material is amorphous with no InxSey peak as revealed by the X-raydiffraction (XRD) spectra. Optical studies using ultraviolet visible (UV-Vis)spectrophotometer show that the material bandgap increased from 2.45 eV in the asdepositedand increased to 2.90 eV after annealing. Electrical studies on theconductivity type of the InxSey thin films show that, both n-type and p-type InxSeylayers were grown by simply varying the growth potential. Materials deposited at lowgrowth voltages are p-type in electrical conduction while those grown at higherpotentials show n-type electrical conduction.
关键词：InxSey; Electrodeposition; n;type and p;type; Amorphous
