期刊名称：Proceedings of the National Academy of Sciences
印刷版ISSN：0027-8424
电子版ISSN：1091-6490
出版年度：2019
卷号：116
期号：44
页码：21998-22003
DOI：10.1073/pnas.1911085116
出版社：The National Academy of Sciences of the United States of America
摘要：We report enhanced thermoelectric performance of SnTe by further increasing its intrinsic high carrier concentration caused by Sn vacancies in contrast to the traditional method. Along with In 2 Te 3 alloying, which results in an enhanced Seebeck coefficient, Li 2 Te is added to further increase the carrier concentration in order to maintain high electrical conductivity. Finally, a relatively high PF ave of ∼28 μW cm −1 K −2 in the range between 300 and 873 K is obtained in an optimized SnTe-based compound. Furthermore, nanoprecipitates with extremely high density are constructed to scatter phonons strongly, resulting in an ultralow lattice thermal conductivity of ∼0.45 W m −1 K −1 at 873 K. Given that the Z value is temperature dependent, the ( ZT ) eng and ( PF ) eng values are adopted to accurately predict the performance of this material. Taking into account the Joule and Thomson heat, output power density of ∼5.53 W cm −2 and leg efficiency of ∼9.6% are calculated for (SnTe) 2.94 (In 2 Te 3 ) 0.02 -(Li 2 Te) 0.045 with a leg length of 4 mm and cold- and hot-side temperatures of 300 and 870 K, respectively..
关键词：SnTe ; resonant level ; nanoprecipitate ; output power density ; efficiency
