期刊名称：Proceedings of the National Academy of Sciences
印刷版ISSN：0027-8424
电子版ISSN：1091-6490
出版年度：2019
卷号：116
期号：51
页码：25530-25534
DOI：10.1073/pnas.1905524116
出版社：The National Academy of Sciences of the United States of America
摘要：Recent progress in understanding the electronic band topology and emergent topological properties encourage us to reconsider the band structure of well-known materials including elemental substances. Controlling such a band topology by external field is of particular interest from both fundamental and technological viewpoints. Here we report possible signatures of the pressure-induced topological phase transition from a semiconductor to a Weyl semimetal in elemental tellurium probed by transport measurements. Pressure variation of the periods of Shubnikov–de Haas oscillations, as well as oscillation phases, shows an anomaly around the pressure theoretically predicted for topological phase transition. This behavior is consistent with the pressure-induced band deformation and resultant band-crossing effect. Moreover, effective cyclotron mass is reduced toward the critical pressure, potentially reflecting the emergence of massless linear dispersion. The present result paves the way for studying the electronic band topology in well-known compounds and topological phase transition by the external field.
