摘要：The effect of V-pits in the upper waveguide (UWG) on device performance of GaN-based laser diodes (LDs) has been studied. Experimental results demonstrate that in comparison with the LDs with u-In0.017Ga0.983N/u-GaN multiple UWG or u-In0.017Ga0.983N one, the LDs with a single u-GaN UWG has the best device performance. They have a smaller threshold current density, and a larger and more stable output optical power. The lowest threshold current density is as low as 1.3 kA/cm2, and the optical power reaches to 2.77 W. Furthermore, atomic force microscopy suggests that the deterioration of device performance of former kinds of devices may be attributed to the increase of V-pits’ size and quantity in the undoped-In0.017Ga0.983N UWG layer, and these V-pits could introduce more nonradiative recombination centers and exacerbate the inhomogeneity of injection current. Moreover, theoretical calculation results indicate that the increase of leakage current and optical loss are additional reasons for the device performance deterioration, which may be caused by a reduction of the potential barrier height for electrons in the quantum wells and by an increased background electron concentration in UWG.
