摘要：We report the electrical conduction mechanism of amorphous titanium oxide thin films applied for bolometers. As the O/Ti ratio
varies from 1.73 to 1.97 measured by rutherford backscattering spectroscopy, the resistivity of the films increases from 0.26 Ω cm
to 10.1 Ω cm. At the same time, the temperature coefficient of resistivity and activation energy vary from −1.2% to −2.3% and
from 0.09 eV to 0.18 eV, respectively. The temperature dependence of the electrical conductivity illustrates a thermally activated
conduction behavior and the carrier transport mechanism in the titanium oxide thin films is found to obey the normal MeyerNeldel
Rule in the temperature range from 293 K to 373 K.
