期刊名称：International Journal of New Computer Architectures and their Applications
印刷版ISSN：2220-9085
出版年度：2018
卷号：8
期号：4
页码：198-205
出版社：Society of Digital Information and Wireless Communications
摘要：Owing to the fact that metal oxide
semiconductor field effect transistors (MOSFETs)
can be effortlessly assimilated into ICs, they have
become the heart of the growing semiconductor
industry. The need to procure low power dissipation,
high operating speed and small size requires the
scaling down of these devices. This fully serves the
Moore’s Law. But scaling down comes with its own
drawbacks which can be substantiated as the Short
Channel Effect. The working of the device
deteriorates owing to SCE. In this work numerical
simulations have been performed to investigate the
electronic transport through the Silicon (Si) channel
of four terminal Nano-MOS namely; drain, source,
top gate and bottom gate. Also, the thickness of
Silicon film channel is varied from 1.5 nm, 2.5 nm,
3.5 nm, 4.5 nm and 5.5 nm with other structural
dimensions remain unchanged. The simulation is
carried out at room temperature (RT) using NanoMOS
simulating software. Three models have been
presented such as; ballistic transport using Green’s
function approach, ballistic transport using semi
classical approach, and drift diffusion transport. The
electrical properties such as 2D electron density of
the sub bands, sub bands energy profile and drain
current - gate voltage (IDS-VGS) have been plotted to
compare the performance of these three transport
models. From the simulation analysis, the drift
diffusion transport model shows low performance in
comparison with the two other models, maybe due to
the electron gas scattering encountered during the
transport through Si channel. Meanwhile, Green’s
function approach and semi classical approach shows
almost similar results with high performance.
