期刊名称：International Journal of Innovative Research in Computer and Communication Engineering
印刷版ISSN：2320-9798
电子版ISSN：2320-9801
出版年度：2019
卷号：7
期号：1
页码：64-71
DOI：10.15680/IJIRCCE.2019. 0701013
出版社：S&S Publications
摘要：Charge pump circuit is widely used in integrated circuits (ICs) due to the continuous power supply
reduction which is dedicated to several kind of applications of low voltage phase locked loop (PLL), flash Memories &
DRAM’s smart power, switched capacitor circuits, non-volatile memories, operational amplifiers, voltage regulators,
SRAMs, LCD drivers, piezoelectric actuators, Radio frequency antenna switch controllers, etc. Charge pump are used
in these application, basically it is DC to DC converter which have capacitor instead of an inductor or transformer for
energy storage. Thereby it is able to generate to higher voltage than power supply voltage. Designing of charge pump
depend on the structure of MOS transistors as switches. CMOS charge pump is appropriate for low voltage
applications, can be activating with very low supply voltage. Conversely, the voltage drop and body effect of MOS
transistor decrease the performance of the charge pump when the number of stages is lift up so that only 4-stage of
various charge pump topologies have been implemented in this thesis such as Dickson, static, dynamic, with control
scheme, with cross connected NMOS cell.
