期刊名称：Lecture Notes in Engineering and Computer Science
印刷版ISSN：2078-0958
电子版ISSN：2078-0966
出版年度：2019
卷号：2239
页码：299-303
出版社：Newswood and International Association of Engineers
摘要：A backside layout design for multiple cell
RCIGBT is proposed to suppress the snapback effect which
happens in the turn-on process of RCIGBT in this paper. The
internal operation mechanism of RCIGBT has been analyzed
by device simulation, proving that our backside layout design
works well. Reduction in the ratio of backside N+/P+ area as
well as the N buffer doping density and increase in the number
of cells in chip are all proved as useful methods in reducing
snapback voltage. Although some novel RCIGBT structures
have been proposed to eliminate the snapback effect, most of
them have been based on a single cell structure, which is not
sufficient for the analysis of RCIGBT. It’s more practical and
feasible in production to simply optimize the backside layout
design of N+, P+ short area with the multiple cell RCIGBT
structure. Here we will report on the analysis of the snapback
effect and the backside optimum layout design for the multiple
cell RCIGBT.
