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  • 标题:Multi-level anomalous Hall resistance in a single Hall cross for the applications of neuromorphic device
  • 本地全文:下载
  • 作者:Y.-U. Kim ; J. Kwon ; H.-K. Hwang
  • 期刊名称:Scientific Reports
  • 电子版ISSN:2045-2322
  • 出版年度:2020
  • 卷号:10
  • 期号:1
  • 页码:1-9
  • DOI:10.1038/s41598-020-58223-z
  • 出版社:Springer Nature
  • 摘要:We demonstrate the process of obtaining memristive multi-states Hall resistance (R H ) change in a single Hall cross (SHC) structure. Otherwise, the working mechanism successfully mimics the behavior of biological neural systems. The motion of domain wall (DW) in the SHC was used to control the ascend (or descend) of the R H amplitude. The primary synaptic functions such as long-term potentiation (LTP), long-term depression (LTD), and spike-time-dependent plasticity (STDP) could then be emulated by regulating R H . Applied programmable magnetic field pulses are in varying conditions such as intensity and duration to adjust R H . These results show that analog readings of DW movement can be closely resembled with the change of synaptic weight and have great potentials for bioinspired neuromorphic computing.
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