摘要：Based on global particle-swarm optimization algorithm and density functional theory methods, we predicted an alloyed Si 2 Ge compond with body centered tetragonal type VII clathrate (space group I 4/mmm) built by a truncated octahedron fromed by six quadrangles and eight hexagons ([4 6 6 8 ]). Si 2 Ge clathrate is 0.06 eV/atom lower than VII Si clathrate and thermally stable up to 1000 K. It has an indirect band gap of 0.23 eV, high p-doping Seebeck coefficient and n-doping electrical conductivity. It owns a low lattice thermal conductivity of 0.28 W/mK at 300 K because of its weak bonding and strong anharmonic interaction of longitudinal acoustic and low-lying optical phonons. The moderate electronic transport properties together with low lattice thermal conductivity results in a high optimal thermoeletric performance value of 2.54 (1.49) at 800 (1000) K in n (p)-doped Si 2 Ge.
