摘要：In this work, the optical gain engineering of an ultra-broadband InGaAs/AlAs solution-processed quantum dot (QD) semiconductor optical amplifier using superimposed quantum structure is investigated. The basic unit in the proposed structure (QDs) is designed and fabricated using solution-processed methods with considerable cost-effectiveness, fabrication ease, and QDs size tunability up to various limits (0.1 nm up to the desired values), considering suitable synthesis methods. Increasing the number of QDs, the device can span more than 1.02 μm (O, C, S, and L bands) using only one type of material for all QDs, and is not restricted to this limit in case of using more QD groups. Also, it can manipulate the optical gain peak value, spectral coverage, and resonant energy for customized optical windows, among which 1.31 μm and 1.55 μm are simulated as widely-applicable cases for model validation. This makes the device a prominent candidate for ultra-wide-bandwidth and also customized-gain applications in general. Variation impact of homogeneous and inhomogeneous broadenings, injection current and number of QD groups on optical gain are explained in detail. Besides proposing a design procedure for implementation of an ultra-broadband optical gain using superimposed QDs in solution-processed technology, the proposed gain engineering idea using this technology provides practically infinite bandwidth and an easy way to realize. By introducing this idea, one more step is actually taken to approach the effectiveness of solution process technology.
