摘要：Flat-type InGaN-based light-emitting diodes (LEDs) without an n-type contact electrode were developed by using a local breakdown conductive channel (LBCC), and the effect of the In content of the InGaN quantum wells (QWs) on the local breakdown phenomenon was investigated. Electroluminescence and X-ray analyses demonstrated that the homogeneity and crystallinity of the InGaN QWs deteriorated as the In content of the InGaN QWs increased, thereby increasing the reverse leakage current and decreasing the breakdown voltage. After reverse breakdown with a reverse current of several mA, an LBCC was formed on the GaN-based LEDs. The surface size and anisotropic shape of the LBCC increased as the indium content of the InGaN QWs in the LEDs increased. Moreover, a flat-type InGaN LED without an n-type electrode was developed by using the LBCC. Notably, the resistance of the LBCC decreased with increasing indium content in the InGaN QWs, leading to lower resistance and higher light emission of the flat-type InGaN-based LEDs without an n-type contact electrode.
